Pixel array including evenly arranged phase detection pixels and image sensor including the pixel array

ABSTRACT

A pixel array includes a plurality of pixel groups. Each of the plurality of pixel groups includes a plurality of subpixels arranged in an M×N matrix, where M is a natural number equal to or greater than 2, and N is a natural number equal to or greater than 2, as well as a plurality of color pixels configured to sense pieces of light having different wavelength bands. Each of the plurality of color pixels includes a same number of phase detection pixels.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based on and claims priority under 35 U.S.C. § 119to Korean Patent Application Nos. 10-2020-0139762 filed on Oct. 26,2020, and 10-2021-0030933 filed on Mar. 9, 2021, in the KoreanIntellectual Property Office, the disclosures of which are incorporatedby reference herein in their entirety.

TECHNICAL FIELD

Embodiments of the inventive concept relate to a pixel array, and moreparticularly, to a pixel array including a plurality of phase detectionpixels arranged evenly in each color pixel, and an image sensorincluding the pixel array.

DISCUSSION OF RELATED ART

Image sensors may include a pixel array which senses an optical signalreceived therein. As image sensors provide an auto focusing function,the pixel array may include a plurality of phase detection pixels, andthe phase detection pixels may be discontinuously and irregularlyarranged in the pixel array.

SUMMARY

Embodiments of the inventive concept provide a pixel array and an imagesensor including the same, in which a plurality of phase detectionpixels are evenly arranged, and thus, color channel-based noise of eachpixel may be reduced or minimized.

According to an embodiment of the inventive concept, a pixel arrayincludes a plurality of pixel groups. Each of the plurality of pixelgroups includes a plurality of subpixels arranged in an M×N matrix,where M is a natural number equal to or greater than 2, and N is anatural number equal to or greater than 2, as well as a plurality ofcolor pixels configured to sense pieces of light having differentwavelength bands. Each of the plurality of color pixels includes a samenumber of phase detection pixels.

According to an embodiment of the inventive concept, an image sensorincludes a pixel array including a plurality of subpixels and aplurality of color pixels configured to sense pieces of light havingdifferent wavelength bands. Each of the plurality of color pixelsincludes a same number of phase detection pixels. The image sensorfurther includes a readout circuit configured to convert a sensingsignal, received from the pixel array through a plurality of columnlines, into binary data. The image sensor further includes a row decoderconfigured to generate a row selection signal controlling the pixelarray such that the sensing signal is output through a plurality of rowlines for each row, and a control logic configured to control the rowdecoder and the readout circuit.

According to an embodiment of the inventive concept, an image sensorincludes a pixel array including a plurality of subpixels and aplurality of color pixels configured to sense pieces of light havingdifferent wavelength bands. Each of the plurality of color pixelsincludes a phase detection pixel disposed at a certain position. Theimage sensor further includes a readout circuit configured to convert asensing signal, received from the pixel array through a plurality ofcolumn lines, into binary data. The image sensor further includes a rowdecoder configured to generate a row selection signal controlling thepixel array such that the sensing signal is output through a pluralityof row lines for each row, and a control logic configured to control therow decoder and the readout circuit and to change a method of outputtingthe sensing signal based on a mode signal.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features of the inventive concept will become moreapparent by describing in detail embodiments thereof with reference tothe accompanying drawings, in which:

FIG. 1 is a block diagram illustrating an image sensor according to anembodiment;

FIG. 2 is a diagram illustrating a pixel array according to anembodiment;

FIGS. 3A and 3B are diagrams illustrating a pixel group according to anembodiment;

FIG. 4 is a diagram describing a data value of a color pixel including asubpixel according to an embodiment;

FIGS. 5A to 5C are cross-sectional views schematically illustrating aphase detection pixel pair according to an embodiment;

FIGS. 6A to 6C are plan views of a dual photodiode of FIG. 5B accordingto an embodiment;

FIG. 6D is a cross-sectional view taken along line A-A′ of FIG. 6Aaccording to an embodiment;

FIG. 7A is a diagram describing phase detection pixels which are notevenly arranged in each color pixel according to a comparative example;

FIGS. 7B and 7C are diagrams describing phase detection pixels arrangedevenly in each color pixel according to an embodiment;

FIGS. 8A to 8F are diagrams illustrating various embodiments of evenlyarranged phase detection pixels;

FIGS. 9A to 9F are diagrams illustrating various embodiments of evenlyarranged phase detection pixels;

FIG. 10 is a diagram illustrating different data outputs in each modeaccording to an embodiment;

FIG. 11 is an equivalent circuit diagram of a pixel according to anembodiment;

FIGS. 12A and 12B are circuit diagrams of a pixel performing an additionoperation on a sensing signal according to an embodiment;

FIG. 13 is a block diagram of an electronic device including amulti-camera module to which an image sensor according to an embodimentis applied;

FIG. 14 is a detailed block diagram of the multi-camera module of FIG.13 according to an embodiment;

FIG. 15 is a block diagram illustrating an electronic device accordingto an embodiment;

and

FIG. 16 is a block diagram illustrating an electronic device accordingto an embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Embodiments of the inventive concept will be described more fullyhereinafter with reference to the accompanying drawings. Like referencenumerals may refer to like elements throughout the accompanyingdrawings.

It will be understood that the terms “first,” “second,” “third,” etc.are used herein to distinguish one element from another, and theelements are not limited by these terms. Thus, a “first” element in anembodiment may be described as a “second” element in another embodiment.

It should be understood that descriptions of features or aspects withineach embodiment should typically be considered as available for othersimilar features or aspects in other embodiments, unless the contextclearly indicates otherwise.

As used herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise.

It will be understood that when a component such as a film, a region, alayer, or an element, is referred to as being “on”, “connected to”,“coupled to”, or “adjacent to” another component, it can be directly on,connected, coupled, or adjacent to the other component, or interveningcomponents may be present. It will also be understood that when acomponent is referred to as being “between” two components, it can bethe only component between the two components, or one or moreintervening components may also be present. Other words used to describethe relationships between components should be interpreted in a likefashion.

FIG. 1 is a block diagram illustrating an image sensor 100 according toan embodiment.

The image sensor 100 may be included in an electronic device having animage or light sensing function. For example, the image sensor 100 maybe included in electronic devices such as, for example, Internet ofThings (IoT) devices, home appliances, tablet personal computers (PCs),personal digital assistants (PDAs), portable multimedia players (PMPs),navigation devices, drones, and advanced driver assistance systems(ADASs). Also, the image sensor 100 may be included in an electronicdevice which is provided as an element in vehicles, furniture,manufacturing equipment, doors, various kinds of measurement devices,etc. However, the image sensor 100 is not limited thereto.

The image sensor 100 may include a lens LS, a pixel array 110, a rowdecoder 120, a control logic 130, a ramp generator 140, and a readoutcircuit 150. In an embodiment, the image sensor 100 may further includea clock signal generator, a signal processor, a column decoder, and/or amemory.

The image sensor 100 may convert an optical signal of an object, inputthrough an optical device, into an electrical signal, and may generateimage data DATA based on the electrical signal. The optical device mayinclude an optical collection device including a mirror and the lens LS.For example, the image sensor 100 may collect light, reflected by theobject, through various paths by using an optical characteristic such asthe dispersion or refraction of light, or may use the optical device forchanging a movement path of light. For convenience of explanation,embodiments are described herein in which the lens LS is utilized.However, as described above, embodiments of the inventive concept may beimplemented with various optical devices in addition to the lens LS.

The pixel array 110 may include a complementary metal oxidesemiconductor (CMOS) image sensor (CIS), which converts an opticalsignal into an electrical signal. An optical signal passing through thelens LS may be transferred to a light receiving surface of the pixelarray 110 and may form an image of the object. The pixel array 110 mayadjust the sensitivity of the optical signal under the control of acontrol logic 130.

The pixel array 110 may be connected to a plurality of row lines RLs anda plurality of column lines CLs, which transfer signals to the pixels ofthe pixel array 110, which are arranged in a matrix form. For example,each of the row lines RLs may respectively transfer control signals,output from the row decoder 120, to transistors included in a pixel, andmay transfer pixel signals of pixels to the readout circuit 150 bycolumn units of the pixel array 110. Each of the plurality of columnlines CLs may extend in a column direction and may connect pixels,disposed in the same column, to the readout circuit 150.

Each of the plurality of pixels of the pixel array 110 may include atleast one optical-to-electro conversion device and transistor. Forexample, the pixel array 110 may be implemented with anoptical-to-electro conversion device (or an optical sensing device) suchas a charge coupled device (CCD) or a CMOS, and moreover, may beimplemented with various kinds of optical-to-electro conversion devices.According to an embodiment, the optical-to-electro conversion device maysense light and may convert the sensed light into a photocharge. Forexample, the optical-to-electro conversion device may include an opticalsensing device, including an organic material or an inorganic material,such as an inorganic photodiode, an organic photodiode, a perovskitephotodiode, a phototransistor, a photogate, or a pinned photodiode. Inan embodiment, the transistor may transfer an electric charge stored inthe optical-to-electro conversion device, reset the electric charge to asource voltage, or convert the electric charge into an electricalsignal.

A micro-lens and a color filter may be stacked on each of the pluralityof pixels, and a plurality of color filters of the plurality of pixelsmay configure a color filter array. The color filter may transmit lightof a certain color among pieces of light incident through themicro-lens, and for example, may transmit a wavelength of a certaincolor area. A color capable of being sensed by a pixel may be determinedbased on a color filter included in the pixel. However, the inventiveconcept is not limited thereto. For example, in an embodiment, anoptical-to-electro conversion device included in a pixel may convertlight, corresponding to a wavelength of a color area, into an electricalsignal based on a level of an electrical signal applied thereto (forexample, a voltage level), whereby a color capable of being sensed bythe pixel may be determined based on a level of an electrical signalapplied to the optical-to-electro conversion device.

In an embodiment, each of the plurality of pixels of the pixel array 110may include a micro-lens and at least one optical-to-electro conversiondevice disposed in parallel under the micro-lens. For example, each ofthe plurality of pixels may include at least one firstoptical-to-electro conversion device and at least one secondoptical-to-electro conversion device, which are disposed in parallel.Each pixel may output a first image signal generated from the firstoptical-to-electro conversion device or a second image signal generatedfrom the second optical-to-electro conversion device. Also, each pixelmay output a sum image signal generated from the firstoptical-to-electro conversion device and the second optical-to-electroconversion device.

The plurality of pixels may include a color pixel (for example, a redpixel, a green pixel, and a blue pixel). The color pixel may generate animage signal which includes corresponding color information based onlight passing through different color filters. In an embodiment, a colorfilter generating different pieces of color information, a color pixelgenerating an image signal including different pieces of colorinformation, or a set of color pixels may be referred to as a colorchannel. For example, a red channel may be referred to as a red filteror a red pixel which is a pixel for processing light passing through thered filter, a blue channel may be referred to as a blue filter or a bluepixel which is a pixel for processing light passing through the bluefilter, and a green channel may be referred to as a green filter or agreen pixel which is a pixel for processing light passing through thegreen filter. In embodiments described herein, colors such as red,green, and blue are described. However, the inventive concept is notlimited thereto.

For example, in an embodiment, the plurality of pixels may includepixels based on a combination of different colors such as, for example,a yellow pixel, a cyan pixel, and a white pixel.

The red pixel may generate an image signal (or electric charges)corresponding to a red color signal in response to wavelengths of a redarea in a visible light area. The green pixel may generate an imagesignal (or electric charges) corresponding to a green color signal inresponse to wavelengths of a green area in the visible light area. Theblue pixel may generate an image signal (or electric charges)corresponding to a blue color signal in response to wavelengths of ablue area in the visible light area. However, the inventive concept isnot limited thereto. For example, in an embodiment, the plurality ofpixels may further include a white pixel. As another example, in anembodiment, the plurality of pixels may include a cyan pixel, a yellowpixel, a magenta pixel, or a white pixel.

Under the control of the control logic 130, for example, by way of a rowcontrol signal CTR_X, the row decoder 120 may generate control signalsfor driving the pixel array 110 and may drive the plurality of pixels ofthe pixel array 110 by row units through the plurality of row lines RLs.Each of the plurality of row lines RLs may extend in a row direction andmay be connected to pixels disposed in the same row.

In an embodiment, the row decoder 120 may control the plurality ofpixels so that the plurality of pixels of the pixel array 110 sensepieces of light incident simultaneously or by row units. Also, the rowdecoder 120 may select pixels by row units from among the plurality ofpixels, provide a reset signal to the selected pixels (for example,pixels of one row), and output sensing voltages, generated by theselected pixels, through the plurality of column lines CLs.

The control logic 130 may provide control signals for controllingtimings of the row decoder 120, the ramp generator 140, and the readoutcircuit 150. For example, the control logic 130 may provide the rowcontrol signal CTR_X to the row decoder 120, and the row decoder 120 maysense the pixel array 110 by row units through the row lines RLs basedon the row control signal CTR_X. For example, the control logic 130 mayprovide the ramp generator 140 with a ramp control signal CTR_R forcontrolling a ramp signal, and the ramp generator 140 may generate aramp signal RMP for an operation of the readout circuit 150 based on theramp control signal CTR_R. For example, the control logic 130 mayprovide a column control signal CTR_Y to the readout circuit 150, andthe readout circuit 150 may receive and process a pixel signal from thepixel array 110 through the column lines CLs based on the column controlsignal CTR_Y.

According to an embodiment, the control logic 130 may overall controlthe image sensor 100 based on a mode signal MD. For example, the controllogic 130 may receive the mode signal MD, indicating high resolutionsensing or low resolution sensing, from an application processor and mayoutput the row control signal CTR_X, the column control signal CTR_Y,and the ramp control signal CTR_R so that each of the plurality ofpixels of the pixel array 110 outputs an independent pixel signal, andthe pixel array 110 may output each of the plurality of pixels based onthe row control signal CTR_X and the column control signal CTR_Y. Also,the readout circuit 150 may sample and process pixel signals based onthe ramp signal RMP. For example, the application processor may providea result, obtained by determining an imaging mode of the image sensor100, as the mode signal MD based on various scenarios such as, forexample, illuminance of an imaging environment, a resolution setting ofa user, and a sensed or learned state.

The control logic 130 may be implemented with a processing circuit suchas hardware including a logic circuit, or may be implemented with acombination of hardware and software such as a processor executingsoftware performing a compression operation. For example, the controllogic 130 may be implemented with a central processing unit (CPU)included in the image sensor 100 and an arithmetic logic unit (ALU), adigital signal processor (DSP), a microprocessor, an applicationspecific integrated circuit (ASIC), and a control logic, which performan arithmetic and logical operation and a bit shift operation, but isnot limited thereto, and may assist an artificial neural network and mayfurther use an accelerator and neural processing unit (NPU) each usingthe artificial neural network.

The ramp generator 140 may generate the ramp signal RMP, which has acertain slope and increases or decreases progressively, and may providethe ramp signal RMP to the readout circuit 150.

The readout circuit 150 may receive, through the column lines CLs, apixel signal output from the pixel array 110 and may process the pixelsignal to output image data IDAT. The readout circuit 150 may include acorrelated double sampling (CDS) circuit 151, an analog-to-digitalconverting (ADC) circuit 153, and a buffer 155.

The CDS circuit 151 may include a plurality of comparators and maycompare the pixel signal, received from the pixel array 110 through theplurality of column lines CLs, with the ramp signal RMP from the rampgenerator 140. Each of the comparators may compare the received pixelsignal with a buffered ramp signal RMP and may output a comparisonresult at a logic low level or a logic high level. For example, when alevel of the ramp signal RMP is the same as that of the pixel signal,each of the comparators may output a comparison signal for shifting afirst level (for example, a logic high level) to a second level (forexample, a logic low level), and a time for shifting a level of thecomparison signal may be determined based on a level of the pixelsignal.

A plurality of pixel signals output from the plurality of pixels mayhave a deviation caused by a unique characteristic (for example, fixedpattern noise (FPN)) of each pixel and/or a deviation caused by acharacteristic difference of a logic (for example, transistors foroutputting an electric charge stored in an optical-to-electro conversiondevice in a pixel) for outputting a pixel signal from a pixel. Asdescribed above, an operation of calculating a reset voltage (or a resetcomponent) and a sensing voltage (or a sensing component) eachcorresponding to a pixel signal and extracting a difference thereof (forexample, a voltage difference) as a valid signal to compensate for adeviation between the plurality of pixel signals output through theplurality of column lines CLs component may be referred to as CDS. Eachof the comparators may output a comparison result (for example, acomparison output) to which a CDS technique is applied. As a result, theCDS circuit 151 may generate a comparison result to which the CDStechnique is applied.

The ADC circuit 153 may convert a comparison result of the CDS circuit151 into digital data to generate and output pixel values correspondingto the plurality of pixels by row units. The ADC circuit 153 may includea plurality of counters. The plurality of counters may be respectivelyconnected to outputs of the plurality of comparators and may countcomparison results output from the plurality of comparators. Each of thecounters may count a logic high or low comparison result output from acorresponding comparator based on a counting clock in a reset conversionperiod for sensing a reset signal and an image conversion period forsensing a sensing signal and may output digital data (for example, apixel value) based on a counting result. Each of the counters mayinclude a latch circuit and a calculation circuit. The latch circuit maylatch a code value received as a counting clock signal at a time forshifting a level of the comparison signal received from a correspondingcomparator. The latch signal may latch each of a code value (forexample, a reset value) corresponding to the reset signal and a codevalue (for example, an image signal value) corresponding to an imagesignal. The calculation circuit may perform an arithmetic operation onthe reset value and the image signal value to generate an image signalvalue from which a reset level of a pixel is removed. Each of thecounters may output the image signal value, from which a reset level ofa pixel is removed, as a pixel value. However, the inventive concept isnot limited thereto. For example, in an embodiment, each counter may beimplemented with an up-counter and a calculation circuit, or anup/down-counter, or a bit-wise inversion counter, in which a count valueincreases sequentially based on a counting clock signal.

The buffer 155 may store a pixel value output from the ADC circuit 153.The buffer 155 may store digital data (for example, a pixel value)corresponding to each row. In an embodiment, the buffer 155 maytemporarily store pieces of digital data output from the counters andmay amplify and output the stored pieces of digital data. That is, thebuffer 155 may include an output buffer. The buffer 155 may temporarilystore the pieces of digital data output from each of the plurality ofcounters, and then, may sequentially or selectively output the storedpieces of digital data, and a sense amplifier may amplify and output thedigital data received thereby. The buffer 155 may output amplified imagedata IDAT to the outside of the readout circuit 150 based on the columncontrol signal CTR_Y of a column decoder for a column based on controlby the control logic 130.

The buffer 155 may be implemented with, for example, static randomaccess memory (SRAM), a latch, a flip-flop, or a combination thereof,but is not limited thereto. In an embodiment, the buffer 155 may be amemory and may be included in the ADC circuit 153.

In an embodiment, the image sensor 100 may support an auto focusing (AF)function and may use phase difference AF technology for auto focusingdetection. A phase difference AF operation may be a method which sensesa disparity of a phase of an image formed in the image sensor 100 toadjust focus. The phase difference AF operation may have acharacteristic where all of a front pin and a rear pin increase in phasedifference. In the phase difference AF operation, a phase differencevalue and direction information about a pin may be seen based on asensed phase difference, and thus, focusing may be performed by moving afocus lens at a time. For example, the image sensor 100 may previouslycalculate a movement value of a lens based on a phase difference anddirection information about a pin, and based thereon, may drive a focuslens at a time to perform focusing. Therefore, the image sensor 100using the phase difference AF operation may perform fast focusingwithout the display shaking of an electronic view finder.

When the phase difference AF operation is utilized, there may be aproblem corresponding to a position at which a phase detection pixel isdisposed in the pixel array 110. When an excessive number of phasedetection pixels are provided in the pixel array 110, the number ofsensing pixels may be reduced, causing resolution degradation. When anexcessively small number of phase detection pixels are provided in thepixel array 110, the image sensor 100 may be unable to detect anaccurate phase difference. The image sensor 100 may support variousimaging modes such as, for example, a live view mode, a static imagemode, a moving image mode, a preview mode, and a high resolution capturemode. In the various imaging modes, a position of a sensing pixel forgenerating an image may be changed, and imaging performance of each modemay be changed based on the arrangement of a phase detection pixel.Therefore, according to embodiments, phase detection pixel arrangingtechnology for increasing the imaging performance of the image sensor100 may be utilized.

FIG. 2 is a diagram illustrating a pixel array 110 according to anembodiment.

Referring to FIG. 2, the pixel array 110 may include a plurality ofpixel groups PG, which are repeatedly arranged. Each of the pixel groupsPG may include a red channel, a green channel, and a blue channel andmay be one color expression unit for reproducing an object (OBJECT inFIG. 1) based on a combination of a red channel, a green channel, and ablue channel.

In an embodiment, one pixel group PG may include a color pixel having aBayer pattern including red, green, and blue. Each color pixel mayinclude nine subpixels arranged in a 3×3 matrix, and each subpixel mayreceive light passing through the same color filter. A pixel group PGincluding nine red subpixels R, nine green subpixels Gr, nine bluesubpixels B, and nine green subpixels Gb, arranged in a 3×3 matrix, maybe referred to as a nano-cell. Hereinafter, a green subpixel Gr may bereferred to as a first green subpixel, and a green subpixel Gb may bereferred to as a second green subpixel. The first green pixels Gr andthe second green pixels Gb may be collectively referred to as greenpixels G. Thus, a green pixel G including green subpixels Gr may bereferred to as a first green pixel, and a green pixel G including greensubpixels Gb may be referred to as a second green pixel. In anembodiment, nine subpixels (e.g., a nano-cell) arranged in a 3×3 matrixis described for convenience of description, but the inventive conceptis not limited thereto. For example, according to embodiments, a pixelgroup PG may be configured in a various number of combinations. Forexample, in an embodiment, a pixel group PG may be configured to have anM×N configuration, where M is a natural number equal to or greater than2 and N is a natural number equal to or greater than 2.

The pixel group PG may include a phase detection pixel P, which is oneof a plurality of subpixels included in a color pixel. According to anembodiment, the phase detection pixel P may be evenly disposed (orarranged) for each color channel (or color pixel). An image sensor(e.g., 100 of FIG. 1) may calculate a distance to an object based on apixel signal difference (for example, disparity) between a pair of phasedetection pixels P, and thus, may automatically detect a focus.Therefore, the phase detection pixel P may be arranged in the pixelarray 110 by horizontal pair units or vertical pair units. In anembodiment, a horizontally arranged phase detection pixel pair PHD isdescribed, but the inventive concept is not limited thereto. Forexample, according to embodiments, a phase detection pixel pair havingvarious geometrical structures such as a vertical structure or adiagonal structure may be utilized.

According to an embodiment of the inventive concept, each color channelof the pixel group PG may include a same number of phase detectionpixels P. That is, each of the plurality of color pixels may include asame number of phase detection pixels. For example, one pixel of thephase detection pixel pair PHD may be disposed at a right bottom end ofa first green pixel, and the other pixel of the phase detection pixelpair PHD may be disposed at a left bottom end of a red pixel. Likewise,one pixel of another phase detection pixel pair may be disposed at aleft bottom end of a blue pixel, and the other pixel of the other phasedetection pixel pair may be disposed at a right bottom end of a secondgreen pixel. The pixel group GP may be repeatedly arranged, and thus, aphase detection pixel P disposed at a left bottom end of a blue pixelmay contact a phase detection pixel P, which is included in anotherpixel group PG and is disposed at a right bottom end of a second greenpixel, to configure one pair.

According to an embodiment, a phase detection pixel P disposed in afirst green pixel and a phase detection pixel P disposed in a red pixelmay configure a phase detection pixel pair PHD. For example, a phasedetection pixel P disposed at a right bottom end of a first green pixelmay sense a left image of an object, and a phase detection pixel Pdisposed at a left bottom end of a red pixel may sense a right image ofthe object. Therefore, a disparity based on a phase difference between aleft image and a right image of the same object may be calculated. Thepixel group PG may be repeatedly arranged in the pixel array 110, andthus, a phase detection pixel P disposed at a left bottom end of a bluepixel and a phase detection pixel of a pixel group (for example, asecond green pixel) disposed to the left from the pixel group PG mayconfigure a phase detection pixel pair PHD and a phase detection pixel Pdisposed at a right bottom end of a second green pixel and a phasedetection pixel of a pixel group (for example, a blue pixel) disposed tothe right from the pixel group PG may configure a phase detection pixelpair PHD. In an embodiment, as an implementation example of a Bayerpattern, for convenience of description, it is described that a redpixel is disposed to the right of a first green pixel, a blue pixel isdisposed at a lower side of the first green pixel, and a second greenpixel is disposed at a diagonal side of the first green pixel, but theinventive concept is not limited thereto. For example, according toembodiments, positions of red, green, and blue pixels may be switchedtherebetween, or a white pixel may be provided instead of one of twogreen pixels, or a pixel may be implemented by a combination ofdifferent colors such as a yellow pixel and a cyan pixel.

According to an embodiment, the pixel array 110 may uniformly include aphase detection pixel P for each color pixel, and thus, relativelyconstant crosstalk between the phase detection pixel P and an adjacentpixel may occur. Constant crosstalk may be removed without separatecorrection, and thus, the performance of phase detection and the qualityof an image may be increased. Crosstalk occurring between the phasedetection pixel P and an adjacent pixel will be described in more detailwith reference to FIGS. 7A to 7C.

Also, in the image sensor 100 according to an embodiment, each colorpixel of the pixel array 110 may uniformly include the phase detectionpixel P, and thus, the number of phase detection pixels P included in acolor pixel may be reduced or minimized. As the number of subpixelssensing an object, except the phase detection pixel P, of each colorpixel increases, a signal-to-noise ratio (SNR) of the image sensor 100may be increased.

FIGS. 3A and 3B are diagrams illustrating a pixel group PG1 or PG2according to an embodiment.

The terms “pixel groups PG1 and PG2”, “color pixels CP1 and CP2”, and“subpixels SP1 and SP2” used herein will be defined in more detail withreference to FIGS. 3A and 3B.

Referring to FIG. 3A, a first pixel group PG1 may include a plurality ofcolor pixels having a Bayer pattern including red, green, and blue, andeach of the color pixels may include four subpixels arranged in a 2×2matrix. The first pixel group PG1 including four red subpixels R1 to R4,four green subpixels Gr1 to Gr4, four blue subpixels B1 to B4, and fourgreen subpixels Gb1 to Gb4, arranged in a 2×2 matrix, may be referred toas a tetra-cell. The plurality of color pixels may be configured tosense pieces of light having different wavelength bands, as describedherein.

The first pixel group PG1 may include two green pixels, one red pixel,and one blue pixel as color pixels. For example, a green pixel includingthe green subpixels GR1 to Gr4 disposed at a left side of a red pixelincluding the red subpixels R1 to R4 may be a first color pixel CP1.

The first color pixel CP1 may include a plurality of subpixels havingthe same color information. For example, a green pixel may be the firstcolor pixel CP1 and may include four subpixels Gr1 to Gr4 arranged in a2×2 matrix. The subpixel Gr1 disposed at a left top end of the firstcolor pixel CP1 among a plurality of subpixels may be a first subpixelSP1.

Referring to FIG. 3B, a second pixel group PG2 may include a pluralityof color pixels having a Bayer pattern including red, green, and blue,and each of the color pixels may include nine subpixels arranged in a3×3 matrix. The second pixel group PG2 including nine red subpixels R1to R9, nine green subpixels Gr1 to Gr9, nine blue subpixels B1 to B9,and nine green subpixels Gb1 to Gb9, arranged in a 3×3 matrix, may bereferred to as a nano-cell.

The second pixel group PG2 may include two green pixels, one red pixel,and one blue pixel as color pixels. For example, a green pixel includingthe green subpixels Gr1 to Gr9 disposed at a left side of a red pixelincluding the red subpixels R1 to R9 may be a second color pixel CP2.

The second color pixel CP2 may include a plurality of subpixels havingthe same color information. For example, a green pixel may be the secondcolor pixel CP2 and may include nine subpixels Gr1 to Gr9 arranged in a3×3 matrix. The subpixel Gr1 disposed at a left top end of the secondcolor pixel CP2 among a plurality of subpixels may be a second subpixelSP2.

In FIGS. 3A and 3B, in a tetra-cell or a nano-cell, it is illustratedthat a pixel group, a color pixel, and a subpixel (for example, pixelgroups PG1 and PG2, color pixels CP1 and CP2, and subpixels SP1 and SP2)are defined, but the inventive concept is not limited thereto. Forexample, embodiments of the inventive concept may be applied tosubpixels, for example, subpixels arranged in an M×N matrix, based on acombination of a various number of subpixels included in each colorpixel.

FIG. 4 is a diagram describing a data value of a color pixel including asubpixel according to an embodiment.

In FIG. 4, a nano-cell, which is a set of nine subpixels arranged in a3×3 matrix, will be described as an example embodiment of the inventiveconcept. As described above, embodiments of the inventive concept may beapplied to subpixels arranged in an M×N matrix.

Referring to FIG. 4, a pixel group PG may include a color pixel whichincludes a plurality of subpixels arranged in an M×N (MN) matrix. Forexample, the pixel group PG may include first and second green pixels, ared pixel, and a blue pixel. The first green pixel may include MN numberof green subpixels Gr, the second green pixel may include MN number ofgreen subpixels Gb, the red pixel may include MN number of red subpixelsR, and the blue pixel may include MN number of blue subpixels B.

According to an embodiment, each color pixel (e.g., first and secondgreen pixels, a red pixel, and a blue pixel) may include a same numberof phase detection pixels P. The phase detection pixels P may be evenlyarranged in each color pixel, and thus, relatively constant crosstalkmay occur between each of the phase detection pixels P and an adjacentpixel. For example, one or more phase detection pixels P may be disposedat each of a right bottom end of the first green pixel, a left bottomend of the red pixel, a left bottom end of the blue pixel, and a rightbottom end of the second green pixel, and each color channel may includea same number of phase detection pixels P.

In a scenario where a high-resolution image is not needed, a sufficientamount of light may be secured because the illuminance of an imagingenvironment is low, or fast image processing is utilized (for example, apreview image), sensing signals or pieces of sensing data of a pluralityof subpixels included in color pixels may be summated. A case whereanalog signals generated by a plurality of optical sensing devices aresummated may be referred to as analog addition, and a case where digitalconversion results of sensing signals are summated may be referred to asdigital addition. Analog addition will be described in more detail withreference to FIGS. 11 and 12, and digital addition will be described inmore detail with reference to FIG. 13.

According to an embodiment, signal or data generated by one colorchannel may be summated as one piece of color pixel information. Forexample, each color pixel may include M×N (MN) number of subpixels. Oneof the subpixels may be a phase detection pixel P for calculating adisparity, and the other subpixels thereof may each be a sensingsubpixel for sensing an image. Referring to the first green pixelaccording to an embodiment, sensing pixels corresponding to the number((M×N)−#P) of the other subpixels, except the number (#P) of phasedetection pixels, of the MN subpixels may be summated. A signal or dataof a summated sensing pixel may include more information (for example,resolution, contrast, sensitivity, etc.) than a signal or data of eachof a plurality of subpixels. Based on a similar manner, the red pixel,the blue pixel, and the second green pixel may be summated, and thus,more information than information included in individual subpixels maybe generated.

FIGS. 5A to 5C are cross-sectional views schematically illustratingphase detection pixel pairs PHDa, PHDb, and PHDc according to anembodiment. For convenience of explanation, in describing FIGS. 5A to5C, repeated descriptions are omitted.

Referring to FIG. 5, the phase detection pixel pair PHDa may include amicro-lens, an optical sensing device, and a color filter. For example,as an implementation example of an optical sensing device, each of aplurality of pixels PX1 and PX2 may include a plurality of photodiodesPD1 and PD2 and a plurality of color filters CF1 and CF2, and aplurality of micro-lenses ML1 and ML2 may be provided on the colorfilters CF1 and CF2. A cross-sectional shape of a micro-lens MLaccording to an embodiment may be an arc having a curvature of a circle,or may be a portion of an oval.

According to an embodiment illustrated in FIG. 5A, one color filter CF1or CF2 and one micro-lens ML1 or ML2 may be provided on one photodiodePD1 or PD2. For example, light incident on a center of the micro-lensML1 may pass through the color filter CF1, and thus, only light of acertain wavelength band (for example, about 500 nm to about 600 nmcorresponding to green) may be transmitted, and the transmitted light ofthe certain wavelength band may form an image in the photodiode PD1.Similarly, light incident on a center of the micro-lens ML2 may passthrough the color filter CF2, and thus, only light having a certainwavelength may be transmitted, and the transmitted light having thecertain wavelength may form an image in the photodiode PD2. Asillustrated in FIG. 5A, a case where light incident on one micro-lensML1 or ML2 forms an image in one photodiode PD1 or PD2 may be referredto as a single photodiode (single-PD). A plurality of pixels PX1 and PX2may be paired and may configure the phase detection pixel PHDa, and animage sensor (e.g., 100 of FIG. 1) may calculate a disparity based on aphase difference between the photodiodes PD1 and PD2 by using the phasedetection pixel PHDa to determine a distance to an object and to adjusta focal length.

Referring to FIG. 5B, the phase detection pixel pair PHDb may include amicro-lens, an optical sensing device, and a color filter. For example,a pixel PXx may include two color filters CFa and CFb and twophotodiodes PDa and PDb respectively corresponding to the color filtersCFa and CFb, and similarly, a pixel PXy may include two color filtersCFc and CFd and two photodiodes PDc and PDd respectively correspondingto the color filters CFc and CFd.

According to an embodiment illustrated in FIG. 5B, the two color filtersCFa and CFb and the two photodiodes PDa and PDb may be provided underone micro-lens MLx. For example, a first light flux LFx, which is aportion of light incident on a center of the micro-lens MLx, may passthrough the color filter CFa and may form an image in the photodiodePDa, and a second light flux LFy, which is the other portion of thelight incident on the center of the micro-lens MLx, may pass through thecolor filter CFb and may form an image in the photodiode PDb. Aphenomenon similar to the pixel PXx may occur in the pixel PXy. Asillustrated in FIG. 5B, a case where light incident on one micro-lensMLx or MLy forms an image in the two photodiodes PDa and PDb (or PDc andPDd) may be referred to as a dual photodiode.

Referring to FIG. 5C, the phase detection pixel pair PHDc may include amicro-lens, an optical sensing device, and a metal shield. For example,a pixel PXz may include one color filter CFz, one metal shield MSz, andone photodiode PDz, and similarly, a pixel PXw may include one colorfilter CFw, one metal shield MSw, and one photodiode PDw. The metalshield may include metal as a component thereof and may block thetraveling or propagation of light.

According to an embodiment illustrated in FIG. 5C, a third light fluxLFz, which is a portion of light incident on a center of the micro-lensMLz, may pass through the color filter CFz and may form an image in aportion of the photodiode PDz corresponding to the color filter CFz, anda path of light, which is the other portion of the light incident on thecenter of the micro-lens MLz, may be blocked by the metal shield MSz,and thus, an image is not formed in a portion of the photodiode PDzcorresponding to the metal shield MSz. Similarly, a fourth light fluxLFw, which is a portion of light incident on a center of the micro-lensMLw, may pass through the color filter CFw and may form an image in aportion of the photodiode PDw corresponding to the color filter CFw, anda path of light, which is the other portion of the light incident on thecenter of the micro-lens MLw, may be blocked by the metal shield MSw,and thus, an image is not formed in a portion of the photodiode PDwcorresponding to the metal shield MSw. In an embodiment, an examplewhere one color filter (for example, CFz) and one metal shield (forexample, MSz) are included in one pixel (for example, PXz) is describedfor convenience of description, but based on a characteristic of a metalshield for blocking the traveling of light, a metal shield may beprovided on or under a color filter, which is sufficiently provided by awidth of a micro-lens (for example, MLz). As illustrated in FIG. 5C, acase where a portion of light incident on one micro-lens MLz or MLw isblocked by a metal shield may be referred to as a metal shieldphotodiode (PD).

Referring to FIG. 5C, because a portion of light is blocked by a metalshield, the first light flux (e.g., LFx of FIG. 5B) and the third lightflux LFz may be similar with respect to the same object, and adisparity, corresponding to an object, of the phase detection pixel pairPHDb or PHDc, may be similar.

FIGS. 6A to 6C are plan views of a dual photodiode of FIG. 5B accordingto an embodiment. FIG. 6D is a cross-sectional view taken along lineA-A′ of FIG. 6A according to an embodiment.

Referring to FIG. 6A, a pixel PXx may include a micro-lens MLx and twosubpixels, for example, a first subpixel SPXa and a second subpixelSPXb. The first subpixel SPXa and the second subpixel SPXb may bedisposed in parallel in a column direction, for example, a Y-axisdirection (a second direction). For example, the first subpixel SPXa maybe disposed in a left region in the pixel PXx, and the second subpixelSPXb may be disposed in a right region in the pixel PXx. The firstsubpixel SPXa and the second subpixel SPXb may respectively include afirst photodiode PDa and a second photodiode PDb.

According to an embodiment, a sensing signal may be generated by each ofthe first photodiode PDa and the second photodiode PDb. For example, thefirst subpixel SPXa may output first image signals, and the secondsubpixel SPXb may output second image signals. A disparity based on thecalculation of a phase difference may be calculated based on the firstand second image signals, and thus, a horizontal direction of focus maybe adjusted.

Referring to FIG. 6B, a pixel PXy may include a micro-lens MLy and twosubpixels, for example, a third subpixel SPXc and a fourth subpixelSPXd. The third subpixel SPXc and the fourth subpixel SPXd may bedisposed in parallel in a row direction, for example, an X-axisdirection (a first direction). For example, the third subpixel SPXc maybe disposed in an upper region in the pixel PXy, and the fourth subpixelSPXd may be disposed in a lower region in the pixel PXy. The thirdsubpixel SPXc and the fourth subpixel SPXd may respectively include athird photodiode PDc and a fourth photodiode PDd. The third subpixelSPXc may output third image signals, and the fourth subpixel SPXd mayoutput fourth image signals. A disparity based on the calculation of aphase difference may be calculated based on the third and fourth imagesignals, and thus, a vertical direction of focus may be adjusted.

Referring to FIG. 6C, a pixel PXxy may include a micro-lens MLxy andfour subpixels, for example, a fifth subpixel SPXac, a sixth subpixelSPXbc, a seventh subpixel SPXad, and an eighth subpixel SPXbd. The fifthsubpixel SPXac may be disposed at a left top in the pixel PXxy, thesixth subpixel SPXbc may be disposed at a right top in the pixel PXxy,the seventh subpixel SPXad may be disposed at a left bottom in the pixelPXxy, and the eighth subpixel SPXbd may be disposed at a right bottom inthe pixel PXxy. In other words, the fifth subpixel SPXac and the sixthsubpixel SPXbc may be disposed in a row direction, for example, anX-axis direction (a first direction), the seventh subpixel SPXad and theeighth subpixel SPXbd may be disposed in the row direction, the fifthsubpixel SPXac and the seventh subpixel SPXad may be disposed in acolumn direction, for example, a Y-axis direction (a second direction),and the sixth subpixel SPXbc and the eighth subpixel SPXbd may bedisposed in the column direction.

The fifth subpixel SPXac, the sixth subpixel SPXbc, the seventh subpixelSPXad, and the eighth subpixel SPXbd may each include oneoptical-to-electro conversion device, and for example, may respectivelyinclude a fifth photodiode PDac, a sixth photodiode PDbc, a seventhphotodiode PDad, and an eighth photodiode PDbd. Comparing FIG. 6C withFIGS. 6A and 6B, in FIG. 6C, four photodiodes PDac, PDbc, PDad, and PDbdmay be vertically and horizontally provided under one micro-lens MLxy,and thus, all of vertical and horizontal disparities may be calculated.A structure where four photodiodes PDac, PDbc, PDad, and PDbd arevertically and horizontally provided under one micro-lens MLxy may bereferred to as a quad-cell.

Referring to FIG. 6D, a pixel PXx may include a first layer L1 and asecond layer L2 stacked in a Z-axis direction, for example, a thirddirection. The first layer L1 may be referred to as anoptical-to-electro conversion layer and may include a color filter CFand a micro-lens MLx formed on a substrate SUB, and twooptical-to-electro conversion devices, for example, a first photodiodePDa and a second photodiode PDb, formed in the substrate SUB. Forexample, the first photodiode PDa and the second photodiode PDb may beembedded within the substrate SUB. In an embodiment, the firstphotodiode PDa and the second photodiode PDb may be completely embeddedwithin (e.g., completely surrounded by) the substrate SUB. The secondlayer L2 may be referred to as a wiring layer, and a plurality ofwirings WS may be formed in the second layer L2.

The substrate SUB may include, for example, a silicon wafer, a siliconon insulator (SOI) substrate, or a semiconductor epitaxial layer. Thesubstrate SUB may include a first surface Sf and a second surface Sbdisposed opposite to each other. For example, the first surface Sf maybe a front surface of the substrate SUB, and the second surface Sb maybe a rear surface of the substrate SUB. Light may be incident on thesecond surface Sb.

A plurality of pixel separation layers SEP1 and SEP2, for example, adeep trench isolation region or a P-type ion implantation region,extending from the second surface Sb of the substrate SUB toward thefirst surface Sf thereof, may be formed on the substrate SUB. The pixelseparation layers SEP1 may be referred to as first pixel separationlayers SEP1, and the pixel separation layers SEP2 may be referred to assecond pixel separation layers SEP2. A pixel area APX, where the pixelPXx is formed, may be divided by the plurality of first pixel separationlayers SEP1, which are relatively long in the Z direction, of theplurality of pixel separation layers SEP1 and SEP2. That is, relative toeach other, the first pixel separation layers SEP1 are longer in the Zdirection than the second pixel separation layers SEP2. Further, thepixel area APX may be divided into a first area A1 and a second area A2,where the first subpixel SPXa and the second subpixel SPXb arerespectively formed, by a second pixel separation layer SEP2 which isrelatively short compared to the first pixel separation layers SEP1. Inan embodiment, each of the first area A1 and the second area A2 may bedoped with first conductive type, for example, P-type, impurities. Thefirst photodiode PDa and the second photodiode PDb may be respectivelyformed in the first area A1 and the second area A2. For example, aplurality of well regions doped with second conductive type, forexample, N-type impurities, may be formed as the first photodiode PDaand the second photodiode PDb.

As illustrated, the first photodiode PDa and the second photodiode PDbmay be disposed in a first direction, for example, an X direction, or asecond direction, for example, a Y direction, with respect to an opticalaxis MLXA of the micro-lens MLx.

A floating diffusion node FD may be formed between the first photodiodePDa and the second photodiode PDb. In an embodiment, a plurality oftransistors may be formed between each of the first photodiode PDa andthe second photodiode PDb and the first surface Sf of the substrate SUB,and signals may be transferred and received to and from the transistorsthrough the plurality of wirings WS of the wiring layer L2. This will bedescribed in more detail with reference to FIGS. 11, 12A, and 12B.

FIG. 7A is a diagram describing phase detection pixels which are notevenly arranged in each color pixel according to a comparative example.FIGS. 7B and 7C are diagrams describing phase detection pixels arrangedevenly in each color pixel according to an embodiment.

Referring to FIG. 7A, a pixel group PG may include four color channels,for example, a first green pixel, a second green pixel, a red pixel, anda blue pixel. According to an embodiment, a phase detection pixel pairfor calculating a vertical disparity may be disposed in a first greenpixel Gr of the pixel group PG. For example, a phase detection pixel Pmay be disposed at each of positions at which a sixth green subpixel Gr6and a ninth green subpixel Gr9 of nine green subpixels configuring thefirst green pixel Gr would be disposed.

Herein, a pixel including green subpixels denoted by Grx may be referredto as a first green Gr, a pixel including red subpixels denoted by Rxmay be referred to as a red pixel, a pixel including blue subpixels Bxmay be referred to as a blue pixel, and a pixel including greensubpixels denoted by Gbx may be referred to as a second green pixel Gb,where x is a natural number.

Crosstalk may be caused from other subpixels directly adjacent to thephase detection pixel P. For example, a phase detection pixel P disposedat a position of the sixth green subpixel Gr6 of the phase detectionpixel pair may be directly adjacent to other subpixels Gr3, Gr5, and R4,and a phase detection pixel P disposed at a position of the ninth greensubpixel Gr9 of the phase detection pixel pair may be directly adjacentto other subpixels Gr8, B3, and R7. Therefore, photons accumulated intoa subpixel directly adjacent to the phase detection pixel P or anundesired signal based on a sensing signal generated from the photonsmay be input to the phase detection pixel P, and may act as noiseadversely affecting a phase detection function.

Four color channels may be provided in the pixel group PG, but in a casewhere the phase detection pixel is provided in only the first greenpixel Gr, crosstalk occurring in each color channel may differ. Forexample, referring to FIG. 7A, three subpixels Gr3, Gr5, and Gr8 causingcrosstalk may be provided in the first green pixel Gr, two subpixels R4and R7 causing crosstalk may be provided in the red pixel R, onesubpixel B3 causing crosstalk may be provided in the blue pixel B, andan adverse effect of a subpixel causing crosstalk may be very small ormay not substantially be provided in the second green pixel Gb. In FIG.7A, a vertical phase detection pixel pair is illustrated for convenienceof description, but considering the symmetry of a pixel group PG, it maybe understood that a horizontal phase detection pixel pair may cause thesame phenomenon.

Referring to FIG. 7B, a phase detection pixel P may be evenly disposedfor each color channel in the pixel group PG. According to anembodiment, each of a first green pixel Gr, a red pixel R, a blue pixelB, and a second green pixel Gb may include one phase detection pixel P.A same number of phase detection pixels P may be disposed at a certainposition for each color channel, and the amount of crosstalk caused froman adjacent pixel may be constant.

According to an embodiment, a phase detection pixel P included in onecolor channel may be disposed based on a position of a phase detectionpixel P included in another color channel directly adjacent thereto. Forexample, a phase detection pixel P included in the first green pixel Grmay be disposed at a right bottom end of the first green pixel Gr basedon a position (a left bottom end) of a phase detection pixel P of thered pixel R directly adjacent to the right. In an embodiment, the phasedetection pixel P included in the first green pixel Gr may be disposedat a bottom end of the first green pixel Gr based on a position of aphase detection pixel P of the blue pixel B adjacent to a portion justunder the first green pixel Gr. This will be described below in moredetail with reference to FIG. 8A.

According to an embodiment, a phase detection pixel pair may beconfigured based on a vertical or horizontal combination of a phasedetection pixel P disposed for each color channel. For example, a phasedetection pixel pair for adjusting a horizontal focus may be configuredbased on a combination of a phase detection pixel P disposed at a rightbottom end of the first green pixel Gr and a phase detection pixel Pdisposed at a left bottom end of a red pixel. In an embodiment, a phasedetection pixel P included in the first green pixel Gr and a phasedetection pixel P of the blue pixel B directly adjacent thereto mayconfigure a vertical phase detection pixel pair, and thus, may adjust ahorizontal focus. This will be described below in more detail withreference to FIG. 8A.

In an embodiment, for convenience of description, it is illustrated thattwo phase detection pixels P configuring a vertical or horizontal phasedetection pixel pair are adjacent to each other, but the inventiveconcept is not limited thereto. For example, according to embodiments,the two phase detection pixels P configuring the vertical or horizontalphase detection pixel pair are apart from each other with one or moresubpixels disposed therebetween.

According to an embodiment, a certain number of phase detection pixels Pmay be disposed at a certain position predetermined for each colorpixel, and thus, the amount of crosstalk occurring in each color channelmay be constant compared to a case where a phase detection pixel P isunevenly disposed in color pixel. For example, three subpixels Gr6, Gr8,and B3 causing crosstalk may be provided directly adjacent to a phasedetection pixel P disposed at a right bottom end of the first greenpixel Gr, and three subpixels R4, R8, and Gb1 causing crosstalk may bedirectly adjacent to a phase detection pixel P disposed at a left bottomend of the red pixel R. In FIG. 7B, it is illustrated that two subpixelsB4 and B8 causing crosstalk are provided directly adjacent to a phasedetection pixel P disposed at a left bottom end of a blue pixel B in onepixel group PG, but referring to FIG. 7B in conjunction with FIG. 7C, asubpixel Gr1, which is directly adjacent to a lower side of a blue pixelB and is disposed at a left top end of a first green pixel Gr of anotherpixel group, may cause crosstalk in a phase detection pixel P of a bluepixel. Similarly, it is illustrated that two subpixels Gb6 and Gb8causing crosstalk are provided directly adjacent to a phase detectionpixel P disposed at a right bottom end of a second green pixel Gb in onepixel group PG, but referring to FIG. 7C, a subpixel R3 disposed at aright top end of a red pixel R of another pixel group may causecrosstalk in a phase detection pixel P of a second green pixel Gb.

Referring to FIG. 7C in conjunction with FIG. 7B, a phase detectionpixel P disposed at a left bottom end of a blue pixel and a phasedetection pixel P disposed at a right bottom end of a second green pixelGb included in another pixel group may be paired and may configure aphase detection pixel pair which adjusts a horizontal focus, and a phasedetection pixel P disposed at a right bottom end of a second green pixelGb and a phase detection pixel P disposed at a left bottom end of a bluepixel included in another pixel group may be paired and may configure aphase detection pixel pair which adjusts a horizontal focus.

A phase detection pixel P disposed at a certain predetermined positionfor each color channel may be disposed at the same position in anotherpixel group PG. For example, a phase detection pixel P disposed at aright bottom end of the first green pixel Gr may be disposed at a rightbottom end of a first green pixel Gr in another pixel group PGidentically, and moreover, a phase detection pixel P disposed at a leftbottom end of the red pixel R may be disposed at a left bottom end of ared pixel R in another pixel group PG identically.

Referring again to FIG. 7B, three subpixels Gr6, Gr8, and Gr1 causingcrosstalk may be provided in the first green pixel Gr, three subpixelsR4, R8, and R3 causing crosstalk may be provided in the red pixel R,three subpixels B4, B8, and B3 causing crosstalk may be provided in theblue pixel B, and three subpixels Gb6, Gb8, and Gb1 causing crosstalkmay be provided in the second green pixel Gb. According to anembodiment, a certain number of phase detection pixels P may be disposedat a certain position for each color pixel, and thus, the amount ofcrosstalk may be substantially the same and certain crosstalk may beefficiently removed without performing a separate correction process.Therefore, according to embodiments of the inventive concept, separatehardware or a digital logic implemented with a combination of hardwareand software for correction may be omitted. Also, according to anembodiment, because a phase detection pixel P is evenly disposed at acertain position for each color channel, the number of phase detectionpixels P included in a color channel may be reduced or minimized, and anSNR of a sensing signal may be increased.

FIGS. 8A to 8F are diagrams illustrating various embodiments of evenlyarranged phase detection pixels P.

In FIGS. 8A to 8F, a nano-cell where a color pixel includes a pluralityof subpixels arranged in a 3×3 matrix will be described. For convenienceof explanation, in describing FIGS. 8A to 8F, repeated descriptions areomitted.

Referring to FIG. 8A, a phase detection pixel P included in a pixelgroup may be provided as one in each color channel, and phase detectionpixels P included in color channels vertically adjacent to each othermay configure a vertical phase detection pixel pair. For example, aphase detection pixel P included in a first green pixel Gr and a phasedetection pixel P of a blue pixel B adjacent to a portion directly underthe first green pixel Gr may configure a vertical phase detection pixelpair (e.g., PHD of FIG. 2). Similarly, a phase detection pixel Pincluded in a red pixel R and a phase detection pixel P included in asecond green pixel Gb of another pixel group directly adjacent to anupper side of the red pixel R may configure a vertical phase detectionpixel pair. A vertical phase detection pixel pair may provide a verticaldisparity of an object, and an image sensor (e.g., 100 of FIG. 1) mayadjust a vertical focus of the object based on a result obtained bycalculating a disparity.

Referring to FIG. 8B, a phase detection pixel P may be disposed at amiddle side position instead of a corner (a side) (for example, FIGS.7A, 7B, and 8A) of a color channel. For example, a phase detection pixelP included in a first green pixel Gr and a phase detection pixel P of ared pixel R directly adjacent to the right of the first green pixel Grmay configure a horizontal phase detection pixel pair (e.g., PHD of FIG.2). Similarly, a phase detection pixel P included in a blue pixel B anda phase detection pixel P included in a second green pixel Gb of anotherpixel group directly adjacent to the left of the second green pixel Gbmay configure a horizontal phase detection pixel pair, and a phasedetection pixel P included in the second green pixel Gb and a phasedetection pixel P included in a blue pixel B of another pixel groupdirectly adjacent to the right of the second green pixel Gb mayconfigure a horizontal phase detection pixel pair. Therefore, verticalfocus of an object may be adjusted.

Referring to FIG. 8C in conjunction with FIG. 5C, a phase detectionpixel P may include a metal shield (e.g., MSz or MSw of FIG. 5C). Themetal shield MSz or MSw, as described above, may include a metalcomponent and may block the traveling or propagation of light. The metalshield MSz or MSw may block a path of a portion of light incident on acenter of a micro-lens (e.g., MLz or MLw of FIG. 5C) to prevent an imagefrom being formed in a photodiode (e.g., PDz or PDw of FIG. 5C) at acorresponding blocked position.

According to an embodiment, a phase detection pixel P included in afirst green pixel Gr and a phase detection pixel P included in a bluepixel B may configure a vertical phase detection pixel pair, a phasedetection pixel P included in a red pixel R and a phase detection pixelP included in a second green pixel Gb of another pixel group mayconfigure a vertical phase detection pixel pair, and a phase detectionpixel P included in the second green pixel Gb and a phase detectionpixel P included in a red pixel R of the other pixel group may configurea vertical phase detection pixel pair. A phase detection pixel P,disposed at a top, of two phase detection pixels P configuring avertical phase detection pixel pair may include a color filter (e.g.,CFz of FIG. 5C) at an upper portion and a metal shield (e.g., MSz ofFIG. 5C) at a lower portion, and a phase detection pixel P, disposed ata bottom, of the two phase detection pixels P may include a color filter(e.g., CFw of FIG. 5C) at a lower portion and a metal shield (e.g., MSwof FIG. 5C) at an upper portion, whereby a vertical disparity may bedetected.

Referring to FIG. 8D, a phase detection pixel P including a metal shield(e.g., MSz or MSw of FIG. 5C) may be paired with another phase detectionpixel P to configure a vertical phase detection pixel pair. A phasedetection pixel P of a metal shield-photodiode type illustrated in FIG.8D may be similar to the arrangement of the phase detection pixels Pdescribed above with reference to FIG. 8B and may correspond to anembodiment to which the metal shield MSz or MSw described above withreference to FIG. 8C is applied. Thus, for convenience of explanation,repeated descriptions are omitted. A phase detection pixel P, disposedto the left, of two phase detection pixels P configuring a horizontalphase detection pixel pair may include a color filter (e.g., CFz of FIG.5C) at a left portion and a metal shield (e.g., MSz of FIG. 5C) at aright portion, and a phase detection pixel P, disposed to the right, ofthe two phase detection pixels P may include a color filter (e.g., CFwof FIG. 5C) at a right portion and a metal shield (e.g., MSw of FIG. 5C)at a left portion, whereby a horizontal disparity may be detected.

Referring to FIG. 8E, all phase detection pixels P included in eachcolor channel may be adjacent to one another. For example, a first greenpixel Gr may include a phase detection pixel P at a right bottom end, ared pixel R may include a phase detection pixel P at a left bottom end,a blue pixel B may include a phase detection pixel P at a right top end,and a second green pixel Gb may include a phase detection pixel P at aleft top end. Accordingly, all phase detection pixels P included in onepixel group may be adjacent to one another. Four adjacent phasedetection pixels P may calculate all of a horizontal disparity and avertical disparity, and an image sensor (e.g., 1100 of FIG. 1) mayadjust all of a horizontal focus and a vertical focus of an object.

Referring to FIG. 8F, a phase detection pixel P included in a pixelgroup may be provided as one or more in each color channel. For example,each of a first green pixel Gr, a red pixel R, a blue pixel B, and asecond green pixel Gb may include two phase detection pixels P. In thearrangement of the phase detection pixels P illustrated in FIG. 8F, apattern where two phase detection pixels P are further provided in ahorizontal direction may be provided, unlike the arrangement of thephase detection pixels P illustrated in FIG. 8E, but the inventiveconcept is not limited thereto.

According to an embodiment, a position of a phase detection pixel Pincluded in one color filter may be symmetrical with a phase detectionpixel P included in another color filter. For example, referring to FIG.8A, a phase detection pixel P included in a first green pixel Gr may besymmetrical with a phase detection pixel P included in a red pixel Rwith respect to a widthwise line crossing a color filter, and the phasedetection pixel P included in the first green pixel Gr may besymmetrical with (e.g., X-axis symmetricity) a phase detection pixel Pincluded in a blue pixel with respect to a widthwise line crossing apixel group. Also, the phase detection pixel P included in the firstgreen pixel Gr and a phase detection pixel P included in a second greenpixel Gb may be disposed at the same position. For example, referring toFIG. 8E, a phase detection pixel P included in a first green pixel Grmay be symmetrical with all of a phase detection pixel P included in ared pixel R, a phase detection pixel P included in a blue pixel, and aphase detection pixel P included in a second green pixel Gb with respectto a widthwise line and a lengthwise line each crossing a pixel group.Also, in addition to embodiments illustrated in FIGS. 8A to 8F, theinventive concept may be implemented by using various geometricalsymmetrical structures where the amount of crosstalk in each colorchannel is constant.

A vertical or horizontal phase detection pixel pair illustrated in FIGS.8A to 8D may be referred to as a 1×2 or 2×1 array micro-lens, a verticalor horizontal phase detection pixel pair illustrated in FIG. 8E may bereferred to as a 2×2 array micro-lens, and a vertical or horizontalphase detection pixel pair illustrated in FIG. 8F may be referred to asa 2×4 matrix micro-lens.

FIG. 9 is a diagram illustrating various embodiments of evenly arrangedphase detection pixels P.

In FIGS. 9A to 9F, a hexadeca-cell where a color pixel includes aplurality of subpixels arranged in a 4×4 matrix will be described. Forconvenience of explanation, in describing FIGS. 9A to 9F, repeateddescriptions are omitted.

Referring to FIG. 9A, a phase detection pixel P included in a pixelgroup may be provided as one in each color channel, and phase detectionpixels P included in color channels horizontally adjacent to each othermay configure a horizontal phase detection pixel pair. For example, aphase detection pixel P included in a first green pixel Gr and a phasedetection pixel P included in a red pixel R may configure a horizontalphase detection pixel pair, a phase detection pixel P included in a bluepixel B and a phase detection pixel P included in a second green pixelGb of another pixel group directly adjacent to the left of the bluepixel B may configure a horizontal phase detection pixel pair, and aphase detection pixel P included in the second green pixel Gb and aphase detection pixel P included in a blue pixel B of another pixelgroup directly adjacent to the right of the phase detection pixel Pincluded in the second green pixel Gb may configure a horizontal phasedetection pixel pair.

Referring to FIG. 9B, phase detection pixels P included in colorchannels vertically adjacent to each other may configure a verticalphase detection pixel pair. For example, a phase detection pixel Pincluded in a first green pixel Gr and a phase detection pixel P of ablue pixel B adjacent to a portion directly under the first green pixelGr may configure a vertical phase detection pixel pair. Similarly, aphase detection pixel P included in a red pixel R and a phase detectionpixel P included in a second green pixel Gb of another pixel groupdirectly adjacent to a top of the red pixel R may configure a verticalphase detection pixel pair, and a phase detection pixel P included inthe second green pixel Gb and a phase detection pixel P included in ared pixel R of another pixel group directly adjacent to a bottom of thesecond green pixel Gb may configure a vertical phase detection pixelpair.

Referring to FIG. 9C in conjunction with FIGS. 5C and 8D, a phasedetection pixel P may include a metal shield (e.g., MSz or MSw of FIG.5C). According to an embodiment, a phase detection pixel P included in afirst green pixel Gr and a phase detection pixel P included in a redpixel R may configure a horizontal phase detection pixel pair, a phasedetection pixel P included in a blue pixel B and a phase detection pixelP included in a second green pixel Gb of a pixel group directly adjacentto the left of the blue pixel B may configure a horizontal phasedetection pixel pair, and a phase detection pixel P included in thesecond green pixel Gb and a phase detection pixel P included in a bluepixel B of another pixel group directly adjacent to the right of thesecond green pixel Gb may configure a horizontal phase detection pixelpair.

Referring to FIG. 9D, a phase detection pixel P may be provided as twoor more in each color channel. According to an embodiment, a phasedetection pixel P may be disposed at a center of a color channel insteadof a corner (a side) (for example, FIGS. 7A, 7B, and 9A) and a side (forexample, FIG. 8B) of the color channel. For example, two or more phasedetection pixels P included in a first green pixel Gr may be disposedinward from an edge (or a corner) of the first green pixel Gr and may bevertically disposed, thereby configuring a vertical phase detectionpixel pair.

According to an embodiment, each color channel of a pixel group may havethe same arrangement pattern as that of a phase detection pixel pairdisposed in one color channel. For example, each of a red pixel R, ablue pixel B, and a second green pixel Gb may include two or more phasedetection pixels P and may have the same arrangement pattern as that oftwo or more phase detection pixels P disposed in the first green pixelGr. Phase detection pixels P may be evenly arranged in each colorchannel, and thus, the amount of crosstalk caused from an adjacent pixelmay be constant and constant crosstalk may be efficiently removed ineach color channel.

Referring to FIG. 9E, each color channel may include two or more phasedetection pixels P, and phase detection pixels P of two different colorchannels may be disposed adjacent to one another. For example, the firstgreen pixel Gr may include two phase detection pixels P which arearranged continuously and directly adjacent to each other in a verticaldirection at a right bottom end thereof, and the red pixel R may includetwo phase detection pixels P which are arranged continuously anddirectly adjacent to each other in a vertical direction at a left bottomend thereof. Four adjacent phase detection pixels P included in thefirst green pixel Gr and the red pixel R may configure a vertical phasedetection pixel and a horizontal phase detection pixel. Similarly, ablue pixel B may include two phase detection pixels P which are arrangedcontinuously and directly adjacent to each other in a vertical directionat a right bottom end thereof, and a second green pixel Gb may includetwo phase detection pixels P which are arranged continuously anddirectly adjacent to each other in a vertical direction at a rightbottom end thereof. Accordingly, four adjacent phase detection pixels Pmay configure a vertical phase detection pixel and a horizontal phasedetection pixel.

Referring to FIG. 9F, each color channel may include two or more phasedetection pixels P, and all of phase detection pixels P of fourdifferent color channels may be disposed directly adjacent to oneanother. For example, a first green pixel Gr may include phase detectionpixels P at a left top end and a right bottom end thereof, a red pixel Rmay include phase detection pixels P at a left bottom end and a righttop end thereof, a blue pixel B may include phase detection pixels P ata right top end and a left bottom end thereof, and a second green pixelGb may include phase detection pixels P at a left top end and a rightbottom end thereof. Accordingly, all of phase detection pixels Pincluded in one pixel group may be directly adjacent to one another.

FIG. 10 is a diagram illustrating different data outputs in each modeaccording to an embodiment.

In FIG. 10, a tetra-cell, which is a set of four subpixels arranged in a2×2 matrix, will be described as an example of the inventive concept. Asdescribed above, embodiments of the inventive concept may be applied toa nano-cell, a hexadeca-cell, or subpixels arranged in an M×N matrix.

Referring to FIG. 10, a pixel array 110 a or 110 b may output differentpieces of data based on a mode. An image sensor (e.g., 100 of FIG. 1)may include a mode of photographing an object, and for example, mayinclude a first mode MD1 or a second mode MD2. In addition, the imagesensor 100 may further include various modes based on, for example, animaging environment, an imaging setting, or an imaging scenario.According to an embodiment, a mode signal MD may be provided to acontrol logic (e.g., 130 of FIG. 1), and the control logic 130 maycontrol the image sensor 100 to sense an object in the first mode MD1 orthe second mode MD2.

According to an embodiment, the first mode MD1 may utilize ahigh-resolution image or may secure a sufficient amount of light becausethe illuminance of an imaging environment is high, or may be an imagingmode corresponding to a scenario utilizing accurate image processing(e.g., a capture image, etc.). The second mode MD2 may not utilize ahigh-resolution image or may not secure a sufficient amount of lightbecause the illuminance of the imaging environment is low, or may be animaging mode corresponding to a scenario utilizing fast image processing(e.g., a preview image, etc.).

According to an embodiment, the pixel array 110 a may generate a sensingsignal or sensing data corresponding to each of a plurality of subpixelsincluded in a color pixel based on the first mode MD1. For example, thepixel array 110 a may include first and second green pixels Gr and Gb, ared pixel R, and a blue pixel B, and each color pixel may include foursubpixels. A plurality of subpixels included in each color channel maygenerate a sensing signal or sensing data as a result obtained bysensing an object. For example, each of four subpixels Gr1 to Gr4included in the first green pixel Gr may generate a sensing signal orsensing data having a data expression depth (e.g., resolution or a datadepth) of a corresponding subpixel as a maximum bandwidth and may outputthe generated sensing signal or sensing data to a readout circuit (e.g.,150 of FIG. 1).

According to an embodiment, the pixel array 110 b may summate and outputa sensing signal or sensing data corresponding to each of a plurality ofsubpixels included in a color pixel based on the second mode MD2. Forexample, the pixel array 110 b may summate sensing signals or pieces ofsensing data respectively generated by the four subpixels Gr1 to Gr4included in the first green pixel Gr and may output a summated sensingsignal or summated sensing data to the readout circuit (e.g., 150 ofFIG. 1). For example, a sum value Gr′ of sensing signals or pieces ofsensing data of the first green pixel Gr may correspond to a sum“Gr1′+Gr2′+Gr3′+Gr4′” of the sensing signals or the pieces of sensingdata of the four subpixels Gr1 to Gr4 included in the first green pixelGr (Gr=Gr1+Gr2+Gr3+Gr4). Similarly, a sum value Gb′ of sensing signalsor pieces of sensing data of a second green pixel Gb may correspond to asum “Gb1′+Gb2′+Gb3′+Gb4′” of the sensing signals or the pieces ofsensing data of four subpixels Gb1 to Gb4 included in the second greenpixel Gb, a sum value R′ of sensing signals or pieces of sensing data ofa red pixel R may correspond to a sum “R1′+R2′+R3′+R4′” of sensingsignals or pieces of sensing data of four subpixels R1 to R4 included ina first red pixel R, and a sum value B′ of sensing signals or pieces ofsensing data of a blue pixel B may correspond to a sum “B1′+B2′+B3′+B4′”of sensing signals or pieces of sensing data of four subpixels B1 to B4included in a first blue pixel B.

According to an embodiment, in a case where the pixel array 110 a or 110b includes a phase detection pixel (e.g., P of FIG. 4), only sensingpixels, other than a phase detection pixel P, of a plurality ofsubpixels included in a color channel, may be summated. That is, a phasedetection pixel P is not included in such a summation. A signal or dataof a summated sensing pixel may include more information (e.g.,resolution, contrast, sensitivity, etc.) than a signal or data of eachof a plurality of subpixels. That is, according to the second mode MD2,even in a case where the amount of light is not sufficiently secured,brightness may increase and noise may decrease compared to a sensingresult of each of individual subpixels, and thus, the quality of acaptured image may be increased.

FIG. 11 is an equivalent circuit diagram of a pixel PX according to anembodiment.

Referring to FIG. 11, the pixel PX may include an optical-to-electroconversion device and a plurality of transistors. The plurality oftransistors may include, for example, a transfer transistor TX, a resettransistor RX, a driving transistor DX, and a selection transistor SX.

The optical-to-electro conversion device may include, for example, aphotodiode PD. The optical-to-electro conversion device may include atleast one of a photo transistor, a photogate, a pinned photodiode (PPD),and a combination thereof. The photodiode PD may include a P-N junctiondiode and may generate an electric charge, for example, an electronwhich is a negative electric charge and a hole which is a positiveelectric charge, in proportion to the amount of incident light, and maygenerate a photocharge based on the intensity of incident light. Thetransfer transistor TX may transfer the photocharge to a floatingdiffusion node FD based on a transfer control signal TG provided from arow decoder (e.g., 120 of FIG. 1).

The floating diffusion node FD (or a floating diffusion region) maymodel the photocharge by using a capacitor C_(H) for storing thephotocharge. The driving transistor DX may amplify the photocharge basedon an electric potential based on the photocharge accumulated into thefloating diffusion node FD and may transfer the amplified photocharge tothe selection transistor SX.

The driving transistor DX may operate as a source follower. The drivingtransistor DX may receive, through a gate terminal thereof, a signalbased on the amount of electric charge of the floating diffusion node FD(e.g., the electric potential of the floating diffusion node FD) and maybuffer and output the received signal. The selection transistor SX maybe turned on in response to a selection signal SEL applied to a gateterminal thereof. A drain electrode of the selection transistor SX maybe connected to a source electrode of the driving transistor DX, andwhen the selection transistor SX is turned on in response to theselection signal SEL output from the row decoder 120, a pixel signalVOUT having a level corresponding to a voltage level of the floatingdiffusion node FD may be output to a column line CL connected to thepixel PX.

The reset transistor RX may reset the floating diffusion node FD basedon a source voltage VDD according to the reset signal RS provided fromthe row decoder 120. The reset transistor RX may periodically resetelectric charges accumulated into the floating diffusion node FD. Asource electrode of the reset transistor RX may be connected to thefloating diffusion node FD, and a drain electrode thereof may beconnected to the source voltage VDD. When the reset transistor RX isturned on in response to the reset signal RS applied to a gate terminalthereof, a source voltage connected to a drain electrode of the resettransistor RX may be transferred to the floating diffusion node FD. Whenthe reset transistor RX is turned on, the electric charges accumulatedinto the floating diffusion node FD may be discharged, and thus, thefloating diffusion node FD may be reset.

FIGS. 12A and 12B are circuit diagrams of a pixel PX performing anaddition operation on a sensing signal according to an embodiment. Forconvenience of explanation, in describing FIGS. 12A and 12B, repeateddescriptions are omitted. FIG. 12A illustrates an example of a pixel PXawhere two subpixels (e.g., SPXa and SPXb of FIG. 6A) are summated, andFIG. 12B illustrates an example of a pixel PXb where four subpixels, forexample, SPXac, SPXbc, SPXad, and SPXbd, are summated.

Referring to FIG. 12A, a pixel PXa may include a first photodiode PD1 a,a second photodiode PD2 a, a first transfer transistor TX1 a, a secondtransfer transistor TX2 a, a reset transistor RXa, a driving transistorDXa, and a selection transistor SXa. A selection signal SELa may controlthe selection transistor SXa.

A floating diffusion node FDa may be shared by the first photodiode PD1a, the second photodiode PD2 a, the first transfer transistor TX1 a, andthe second transfer transistor TX2 a. The first photodiode PD1 a and thefirst transfer transistor TX1 a may be referred to as a first subpixel(e.g., SPXa of FIG. 6A), and the second photodiode PD2 a and the secondtransfer transistor TX2 a may be referred to as a second subpixel (e.g.,SPXb of FIG. 6A).

Each of the first photodiode PD1 a and the second photodiode PD2 a maygenerate a photocharge which varies based on the intensity of light.When the first transfer transistor TX1 a is turned on in response to afirst transfer control signal TG1 a applied to a gate terminal thereof,an electric charge, for example, a photocharge, generated by the firstphotodiode PD1 a may be transferred to and stored in the floatingdiffusion node FDa. When the second transfer transistor TX2 a is turnedon in response to a second transfer control signal TG2 a applied to agate terminal thereof, the electric charge, for example, a photocharge,generated by the first photodiode PD1 a may be transferred to and storedin the floating diffusion node FDa. The electric charge stored in thefloating diffusion node FDa may be output as an output voltage VOUTa.

The first transfer control signal TG1 a and the second transfer controlsignal TG2 a may be separate signals, and thus, a turn-on time of thefirst transfer transistor TX1 a and a turn-on time of the secondtransfer transistor TX2 a may be independently controlled by each of thefirst transfer control signal TG1 a and the second transfer controlsignal TG2 a.

According to an embodiment, in the first mode MD1, the first transfercontrol signal TG1 a and the second transfer control signal TG2 a may beapplied at different times, and the first transfer transistor TX1 a andthe second transfer transistor TX2 a may be turned on at differenttimes, whereby a photocharge of each of the first transfer transistorTX1 a and the second transfer transistor TX2 a may be stored in thefloating diffusion node FDa. After one of the first transfer controlsignal TG1 a and the second transfer control signal TG2 a is applied, areset signal RSa for resetting the floating diffusion node FDa may beapplied, and then, the other of the first transfer control signal TG1 aand the second transfer control signal TG2 a may be applied.

According to an embodiment, in the second mode MD2, the first transfercontrol signal TG1 a and the second transfer control signal TG2 a may beapplied at substantially the same time, and the first transfertransistor TX1 a and the second transfer transistor TX2 a may be turnedon at substantially the same time, and thus, the photocharge of each ofthe first transfer transistor TX1 a and the second transfer transistorTX2 a may be stored in the floating diffusion node FDa.

Referring to FIG. 12B, the pixel PXb may include a plurality ofoptical-to-electro conversion devices, for example, four photodiodes(e.g., first to fourth photodiodes PD1 b to PD4 b), first to fourthtransfer transistors TX1 b to TX4 b, a reset transistor RXb, a drivingtransistor DXb, and a selection transistor SXb. A reset signal RSb maycontrol the reset transistor RXb, and a selection signal SELb maycontrol the selection transistor SXb.

A micro-lens may be disposed on each of the first to fourth photodiodesPD1 b to PD4 b. Therefore, a combination of a micro-lens and anoptical-to-electro conversion device may be referred to as one pixel,and thus, the pixel PXb of FIG. 12 may correspond to a combination offour subpixels (e.g., PXxy of FIG. 6C).

A floating diffusion node FDb may be shared by four optical-to-electroconversion devices (e.g., the first to fourth photodiodes PD1 b to PD4b) and the four transfer transistors TX1 b to TX4 b. The transfertransistors TX1 b to TX4 b may respectively connect or disconnect thefour optical-to-electro conversion devices (e.g., the first to fourthphotodiodes PD1 b to PD4 b) to or from the floating diffusion node FDbbased on voltages of transfer control signals TG1 b to TG4 b.

Light incident on the optical-to-electro conversion devices (e.g., thefirst to fourth photodiodes PD1 b to PD4 b) may be accumulated aselectric charges through optical-to-electro conversion. When electriccharges accumulated into the first to fourth photodiodes PD1 b to PD4 bare transferred to the floating diffusion node FDb, the electric chargesmay be output as an output voltage VOUTb via the driving transistor DXband the selection transistor SXb. The output voltage VOUTb correspondingto a voltage variation of the floating diffusion node FDb may betransferred to an external readout circuit (e.g., 150 of FIG. 1).

FIG. 13 is a block diagram of an electronic device 1000 including amulti-camera module to which an image sensor according to an embodimentis applied. FIG. 14 is a detailed block diagram of the multi-cameramodule of FIG. 13 according to an embodiment.

Referring to FIG. 13, the electronic device 1000 may include a cameramodule group 1100, an application processor 1200, a power managementintegrated circuit (PMIC) 1300, and an external memory 1400.

The camera module group 1100 may include a plurality of camera modules1100 a to 1100 c. Although an embodiment in which three camera modules1100 a to 1100 c are provided is illustrated, the inventive concept isnot limited thereto. For example, in some embodiments, the camera modulegroup 1100 may include only two camera modules, or the camera modulegroup 1100 may include n camera modules, where n is a natural numberequal to 4 or more.

Hereinafter, a detailed configuration of the camera module 1100 b willbe described in more detail with reference to FIG. 14. According toembodiments, the following description may be identically applied to theother camera modules 1100 a and 1100 b.

Referring to FIG. 14, the camera module 1100 b may include a prism 1105,an optical path folding element (OPFE) 1110, an actuator 1130, an imagesensing device 1140, and a storage 1150.

The prism 1105 may include a reflective surface 1107 of a lightreflecting material and may change a path of light L incident fromoutside of the image sensor.

In some embodiments, the prism 1105 may change the path of the light L,which is incident in a first direction X, to a second direction Yvertical to the first direction X. Also, the prism 1105 may rotate thereflective surface 1107 of the light reflecting material in an Adirection with respect to a center axis 1106, or may rotate the centeraxis 1106 in a B direction to change the path of the light L, which isincident in the first direction X, to the second direction Y. The OPFE1110 may move in a third direction Z vertical to the first direction Xand the second direction Y.

In some embodiments, as illustrated, a maximum rotation angle of theprism 1105 in the A direction may be less than or equal to about 15degrees in a positive (+) A direction and may be greater than about 15degrees in a negative (−) A direction, but the inventive concept is notlimited thereto.

In some embodiments, the prism 1105 may move within a range of about 20degrees, or a range of about 10 degrees to about 20 degrees, or a rangeof about 15 degrees to about 20 degrees in a positive (+) or negative(−) B direction, and in a moving angle of the prism 1105, the prism 1105may move at the same angle in the positive (+) or negative (−) Bdirection or may move at a substantially similar angle within a range ofabout 1 degree.

In some embodiments, the prism 1105 may move the reflective surface 1107of the light reflecting material in the third direction (e.g., a Zdirection) parallel to an extension direction of the center axis 1106.

The OPFE 1110 may include, for example, m (where m is a natural number)number of groups each including a plurality of optical lenses. Also, mnumber of lenses may move in the second direction Y to change an opticalzoom ratio of the camera module 1100 b. For example, in a case where abasic optical zoom ratio of the camera module 1100 b is Z, when m numberof optical lenses included in the OPFE 1110 move, the optical zoom ratioof the camera module 1100 b may be changed to an optical zoom ration of3Z or 5Z or more.

The actuator 1130 may move the OPFE 1110 or the optical lens to acertain position. For example, the actuator 1130 may adjust a positionof the optical lens so that an image sensor 1142 is placed at a focallength of the optical lens for accurate sensing.

The image sensing device 1140 may include the image sensor 1142, acontrol logic 1144, and a memory 1146. The image sensor 1142 may sensean image of a sensing target by using the light L provided through theoptical lens.

The control logic 1144 may control an overall operation of the cameramodule 1100 b. For example, the control logic 1144 may control anoperation of the camera module 1100 b based on a control signal providedthrough a control signal line CSLb.

The memory 1146 may store information utilized for an operation of thecamera module 1100 b such as, for example, calibration data 1147. Thecalibration data 1147 may include information which is utilized forgenerating image data from the light L provided from outside of theimage sensor by using the camera module 1100 b. The calibration data1147 may include, for example, information about the degree of rotation,information about a focal length, and information about an optical axis.In a case where the camera module 1100 b is implemented in a multi-statecamera form where a focal length varies based on a position of theoptical lens, the calibration data 1147 may include a position-based (orstate-based) focal length of the optical lens and information associatedwith auto focusing.

The storage 1150 may store image data sensed through the image sensor1142. The storage 1150 may be disposed outside the image sensing device1140 and may be implemented in a stacked form in which a sensor chipconfiguring the image sensing device 1140 and the storage 1150 arestacked. In some embodiments, the storage 1150 may be implemented withelectrically erasable programmable read-only memory (EEPROM), but theinventive concept is not limited thereto.

Still referring to FIGS. 13 and 14, in some embodiments, each of theplurality of camera modules 1100 a to 1100 c may include the actuator1130. Therefore, each of the plurality of camera modules 1100 a to 1100c may include the same or different pieces of calibration data 1147based on an operation of the actuator 1130 included therein.

In some embodiments, one camera module (e.g., 1100 b) of the pluralityof camera modules 1100 a to 1100 c may include a folded-lens cameramodule including the prism 1105 and the OPFE 1110 described above, andthe other camera modules (e.g., 1100 a and 1100 b) may include avertical camera module which does not include the prism 1105 and theOPFE 1110. However, the inventive concept is not limited thereto.

In some embodiments, one camera module (e.g., 1100 c) of the pluralityof camera modules 1100 a to 1100 c may include a vertical depth camerawhich extracts depth information by using, for example, an infrared (IR)ray. In this case, the application processor 1200 may merge image data,provided from the depth camera, with image data provided from anothercamera module (e.g., 1100 a or 1100 b) to generate a three-dimensional(3D) depth image.

In some embodiments, at least two camera modules (e.g., 1100 a and 1100b) of the plurality of camera modules 1100 a to 1100 c may havedifferent fields of view. In this case, for example, optical lenses ofat least two camera modules (e.g., 1100 a and 1100 b) of the pluralityof camera modules 1100 a to 1100 c may differ. However, the inventiveconcept is not limited thereto.

Also, in some embodiments, fields of view of the plurality of cameramodules 1100 a to 1100 c may differ. In this case, optical lensesrespectively included in the plurality of camera modules 1100 a to 1100c may differ. However, the inventive concept is not limited thereto.

In some embodiments, the plurality of camera modules 1100 a to 1100 cmay be disposed physically apart from one another. That is, in someembodiments, the plurality of camera modules 1100 a to 1100 c do notshare a sensing region of one image sensor 1142, but rather, anindependent image sensor 1142 may be disposed in each of the pluralityof camera modules 1100 a to 1100 c.

Referring again to FIG. 13, the application processor 1200 may includean image processing device 1210, a memory controller 1220, and aninternal memory 1230. The application processor 1200 may be implementedapart from the plurality of camera modules 1100 a to 1100 c. Forexample, the application processor 1200 and the plurality of cameramodules 1100 a to 1100 c may be implemented as separate semiconductorchips.

The image processing device 1210 may include a plurality of sub imageprocessors 1212 a to 1212 c, an image generator 1214, and a cameramodule controller 1216.

The image processing device 1210 may include the plurality of sub imageprocessors 1212 a to 1212 c corresponding to the number of cameramodules 1100 a to 1100 c.

Image data generated from each of the camera modules 1100 a to 1100 cmay be provided to a corresponding sub image processor of the sub imageprocessors 1212 a to 1212 c through a plurality of image signal linesISLa, ISLb, and ISLc, which are spaced apart from one another. Forexample, image data generated from the camera module 1100 a may beprovided to the sub image processor 1212 a through the image signal lineISLa, image data generated from the camera module 1100 b may be providedto the sub image processor 1212 b through the image signal line ISLb,and image data generated from the camera module 1100 c may be providedto the sub image processor 1212 c through the image signal line ISLc.The transfer of image data may be performed by using a camera serialinterface (CSI) based on, for example, mobile industry processorinterface (MIPI), but the inventive concept is not limited thereto.

In some embodiments, one sub image processor may be disposed tocorrespond to a plurality of camera modules. For example, the sub imageprocessor 1212 a and the sub image processor 1212 c may not beseparately implemented as illustrated, but rather, may be integrated andimplemented as one sub image processor, and image data provided from thecamera module 1100 a and the camera module 1100 c may be selectedthrough a selection device (e.g., a multiplexer) and may be provided toan integrated sub image processor.

Image data provided to each of the sub image processors 1212 a to 1212 cmay be provided to the image generator 1214. The image generator 1214may generate an output image by using image data provided from the subimage processors 1212 a to 1212 c based on image generating informationor a mode signal MD.

For example, the image generator 1214 may merge at least some of piecesof image data generated from the camera modules 1100 a to 1100 c havingdifferent fields of view based on the image generating information orthe mode signal MD to generate an output image. Also, the imagegenerator 1214 may select one piece of image data from among the piecesof image data generated from the camera modules 1100 a to 1100 c havingdifferent fields of view based on the image generating information orthe mode signal MD to generate the output image.

Referring again to FIG. 4, according to an embodiment, the imagegenerator 1214 may summate (digitally summate) pieces of image datagenerated by converting sensing signals respectively output from aplurality of subpixels. For example, a nano-cell which is a set of ninesubpixels is illustrated in FIG. 4, and the image generator 1214, mayreceive image data which is a result obtained by individually performinganalog-to-digital conversion on a plurality of subpixels included ineach color channel, and may summate pieces of image data correspondingto a number of (e.g., eight) sensing pixels among a plurality ofsubpixels subsequently.

In some embodiments, the image generating information may include a zoomsignal or zoom factor. Also, in some embodiments, the mode signal MD maybe, for example, a signal based on a mode selected by a user.

When the image generating information is a zoom signal (a zoom factor)and the camera modules 1100 a to 1100 c have different fields of view,the image generator 1214 may perform different operations based on thekind of zoom signal. For example, when the zoom signal is a firstsignal, image data output from the camera module 1100 a may be mergedwith image data output from the camera module 1100 b, and then, anoutput image may be generated by using a merged image signal and theimage data which is not used for the merging and is output from thecamera module 1100 b. For example, in an embodiment, when the zoomsignal is a second signal which differs from the first signal, the imagegenerator 1214 does not perform the merging of the image data and mayselect one piece of image data from among the pieces of image datarespectively output from the camera modules 1100 a to 1100 c to generatethe output image. However, the inventive concept is not limited thereto,and depending on the case, an image data processing method may bemodified.

In some embodiments, the image generator 1214 may receive pieces ofimage data having different exposure times from at least one of theplurality of sub image processors 1212 a to 1212 c, and may perform highdynamic range (HDR) processing on the pieces of image data to generatemerged image data where a dynamic range has increased.

The camera module controller 1216 may provide a control signal to eachof the camera modules 1100 a to 1100 c. A control signal generated fromthe camera module controller 1216 may be provided to a correspondingcamera module of the camera modules 1100 a to 1100 c through the controlsignal lines CSLa, CSLb, and CSLc, which are spaced apart from oneanother.

One of the plurality of camera modules 1100 a to 1100 c may bedesignated as a master camera (e.g., 1100 b) based on the mode signal MDor the image generating information including the zoom signal, and theother camera module (e.g., 1100 a and 1100 c) may be designated as aslave camera. Such information may be included in the control signal andmay be provided to a corresponding camera module of the camera modules1100 a to 1100 c through the control signal lines CSLa, CSLb, and CSLc.

A camera module operating as a master or a slave may be changed based ona zoom factor or an operation mode signal. For example, when a field ofview of the camera module 1100 a is wider than a field of view of thecamera module 1100 b and the zoom factor represents a low zoom ratio,the camera module 1100 b may operate as a master, and the camera module1100 a may operate as a slave. Alternatively, when the zoom factorrepresents a high zoom ratio, the camera module 1100 a may operate as amaster, and the camera module 1100 b may operate as a slave.

In some embodiments, the control signal provided from the camera modulecontroller 1216 to each of the camera modules 1100 a to 1100 c mayinclude a sync enable signal. For example, when the camera module 1100 bis a master camera and each of the camera modules 1100 a and 1100 c is aslave camera, the camera module controller 1216 may transfer the syncenable signal to the camera module 1100 b. The camera module 1100 bprovided with the sync enable signal may generate a sync signal based onthe sync enable signal and may provide the generated sync signal to thecamera modules 1100 a and 1100 b through a sync signal line SSL. Thecamera module 1100 b and the camera modules 1100 a and 1100 c may besynchronized with the sync signal and may transfer image data to theapplication processor 1200.

In some embodiments, the control signal provided from the camera modulecontroller 1216 to the camera modules 1100 a to 1100 c may include modeinformation based on the mode signal MD. Based on the mode information,the plurality of camera modules 1100 a to 1100 c may operate in a firstoperation mode and a second operation mode in association with a sensingspeed.

In the first operation mode, the plurality of camera modules 1100 a to1100 c may generate an image signal at a first speed, for example,generate an image signal having a first frame rate, encode the imagesignal at a second speed which is higher than the first speed, forexample, encode the image signal having a second frame rate which ishigher than the first frame rate, and transfer the encoded image signalto the application processor 1200. In this case, the second speed may beabout 30 or less times the first speed.

The application processor 1200 may store the received image signal(e.g., the encoded image signal) in the memory 1230 included therein orthe external memory 1400 disposed outside of the application processor1200, and then, may read and decode the encoded image signal from thememory 1230 or the external memory 1400 and may display image datagenerated based on the decoded image signal. For example, acorresponding sub image processor of the plurality of sub imageprocessors 1212 a to 1212 c of the image processing device 1210 mayperform decoding and may perform image processing on the decoded imagesignal.

In the second operation mode, the plurality of camera modules 1100 a to1100 c may generate an image signal at a third speed which is lower thanthe first speed, for example, generate an image signal having a thirdframe rate which is lower than the first frame rate, and may transferthe generated image signal to the application processor 1200. The imagesignal provided to the application processor 1200 may be a signal onwhich encoding is not performed. The application processor 1200 mayperform image processing on the image signal received thereby, or maystore an image signal in the memory 1230 or the external memory 1400.

The PMIC 1300 may supply power (e.g., a source voltage) to each of theplurality of camera modules 1100 a to 1100 c. For example, under thecontrol of the application processor 1200, the PMIC 1300 may supplyfirst power to the camera module 1100 a through a power signal linePSLa, supply second power to the camera module 1100 b through a powersignal line PSLb, and supply third power to the camera module 1100 cthrough a power signal line PSLc.

In response to a power control signal PCON received from the applicationprocessor 1200, the PMIC 1300 may generate power corresponding to eachof the plurality of camera modules 1100 a to 1100 c and may adjust alevel of the power. The power control signal PCON may include a poweradjustment signal based on an operation mode of each of the plurality ofcamera modules 1100 a to 1100 c. For example, the operation mode mayinclude a low power mode, and in this case, the power control signalPCON may include information about a predetermined power level and acamera module which operates in the low power mode. Levels of powersrespectively supplied to the plurality of camera modules 1100 a to 1100c may be the same or may differ. Also, a level of a power maydynamically vary.

FIG. 15 is a block diagram illustrating an electronic device 30according to an embodiment.

Referring to FIG. 15, the electronic device 30 may include a processor31, a memory 32, a storage device 33, an image sensor 34, aninput/output (I/O) device 35, and a power supply 36, and the elementsmay communicate with one another through a bus. The image sensor 100 ofFIG. 10 may be applied as the image sensor 34 of FIG. 15, and forconvenience of explanation, repeated descriptions are omitted.

The processor 31 may perform calculations or tasks utilized for anoperation of the electronic device 30. The memory 32 and the storagedevice 33 may store data utilized for the operation of the electronicdevice 30. For example, the processor 31 may include a microprocessor, aCPU, or an application processor, the memory 32 may include a volatilememory or a non-volatile memory, and the storage device 33 may include asolid state drive (SSD), a hard disk drive (HHD), or a CD-ROM.

The I/O device 35 may include an input means such as, for example, akeyboard, a keypad, or a mouse, and an output means such as, forexample, a printer or a display. The power supply 36 may supply anoperating voltage utilized for operation of the electronic device 30.

FIG. 16 is a block diagram illustrating an electronic device 1 aaccording to an embodiment.

Referring to FIG. 16, the electronic device 1 a according to anembodiment may include an image sensor 10 a, an image signal processor(ISP) 20 a, an application processor (AP) 30 a, a display device 50 a, aworking memory 40 a, a storage device 60 a, a user interface 70 a, and awireless transceiver 80 a. The image sensor 100 of FIG. 1 may operate asthe image sensor 10 a of FIG. 17, and for convenience of explanation,repeated descriptions are omitted.

The image sensor 10 a may generate image data, for example, raw imagedata, based on a light signal received thereby, and may provide binarydata to the image signal processor 20 a. For example, the readoutcircuit (e.g., 150 of FIG. 1) may convert a sensing signal, receivedfrom the pixel array (e.g., 110 b of FIG. 1) through a plurality ofcolumn lines CL, into binary data. The image signal processor 20 a mayperform image processing, for example, may convert image data IDAT of aBayer pattern into a YUV or RGB format, for converting a data format ofthe image data IDAT which is digital data of an image, and for example,may remove noise, adjust brightness, and adjust sharpness, so as toincrease image quality. In an embodiment, the image signal processor 20a may perform, for example, white balancing, denoising, demosaicking,lens shading, gamma correction, edge detection, edge enhancement, noisereduction processing, gain adjustment, waveform standardizationprocessing, interpolation processing, edge emphasis processing, andbinning to remove distortion of the image data IDAT, and may perform apreprocessing operation for increasing algorithm performance. As theimage signal processor 20 a performs preprocessing, a post-processingspeed of the image data IDAT may be increased. The image sensor 10 a andthe image signal processor 20 a may be referred to as a camera module 15a.

In an embodiment, the image signal processor 20 a may be providedoutside the image sensor 10 a so as to increase space efficiency, or maybe included in the image sensor 10 a so as to increase a processingspeed. In an embodiment, for convenience of description, it is describedthat the image signal processor 20 a and the application processor 30 aare separately provided, but the inventive concept is not limitedthereto. For example, according to embodiments, the image signalprocessor 20 a is not configured with separate hardware, or acombination of hardware and software and may be provided as a lowerelement of the application processor 30 a.

The application processor 30 a may control an overall operation of theelectronic device 1 a and may be provided as a system on chip (SoC)which drives an application program and an operating system (OS). Theapplication processor 30 a may control an operation of the image signalprocessor 20 a and may provide the display device 50 a with convertedimage data generated by the image signal processor 20 a, or may storethe converted image data in the storage device 60 a.

The working memory 40 a may store programs, executed by the applicationprocessor 30 a, and/or data obtained through processing by theapplication processor 30 a. The storage device 60 a may be implementedas a non-volatile memory device such as, for example, NAND flash memoryor a resistive memory. The storage device 60 a may be provided as, forexample, a memory card such as, for example, a multimedia card (MMC), anembedded multi-media card (eMMC), a secure digital (SD) card, or amicro-SD card.

The storage device 60 a may store data and/or a program corresponding toan execution algorithm which controls an image processing operation ofthe image signal processor 20 a, and when the image processing operationis performed, the data and/or the program may be loaded into the workingmemory 40 a. For example, the working memory 40 a or the storage device60 a may be a non-volatile memory and may include, for example, readonly memory (ROM), flash memory, phase change random access memory (RAM)(PRAM), magnetic RAM (MRAM), resistive RAM (RRAM), or ferroelectric RAM(FRAM), or may be a volatile memory and may include, for example, staticRAM (SRAM) or dynamic RAM (DRAM). However, the inventive concept is notlimited thereto.

The user interface 70 a may be implemented with various devices thatreceive a user input such as, for example, a keyboard, a key panel, atouch panel, a fingerprint sensor, or a microphone. The user interface70 a may receive the user input and may provide the applicationprocessor 30 a with a signal corresponding to the received user input.The wireless transceiver 80 a may include a modem 81 a, a transceiver 82a, and an antenna 83 a.

As the demand for high-quality images increases, pixels of image sensorsmay be highly integrated. When a pixel size of each image sensordecreases and a pattern of the pixel array is uneven, an increase incrosstalk between pixels may occur. Referring to a comparative example,a target pixel may be adversely affected by a signal occurring in anadjacent pixel due to such crosstalk, and thus, a spectroscopiccharacteristic of a signal generated by the target pixel may be changed,causing a reduction in color reproducibility. Due to the occurrence ofcrosstalk, the quality of an image may be degraded. Embodiments of theinventive concept remove or reduce this adverse effect of crosstalk, asdescribed above.

As is traditional in the field of the inventive concept, embodiments aredescribed, and illustrated in the drawings, in terms of functionalblocks, units and/or modules. Those skilled in the art will appreciatethat these blocks, units and/or modules are physically implemented byelectronic (or optical) circuits such as logic circuits, discretecomponents, microprocessors, hard-wired circuits, memory elements,wiring connections, etc., which may be formed using semiconductor-basedfabrication techniques or other manufacturing technologies. In the caseof the blocks, units and/or modules being implemented by microprocessorsor similar, they may be programmed using software (e.g., microcode) toperform various functions discussed herein and may optionally be drivenby firmware and/or software. Alternatively, each block, unit and/ormodule may be implemented by dedicated hardware, or as a combination ofdedicated hardware to perform some functions and a processor (e.g., oneor more programmed microprocessors and associated circuitry) to performother functions.

While the inventive concept has been particularly shown and describedwith reference to embodiments thereof, it will be understood thatvarious changes in form and detail may be made therein without departingfrom the spirit and scope of the inventive concept as defined by thefollowing claims.

1. A pixel array comprising a plurality of pixel groups, each of theplurality of pixel groups comprising: a plurality of subpixels arrangedin an M×N matrix, wherein M is a natural number equal to or greater than2, and N is a natural number equal to or greater than 2; and a pluralityof color pixels configured to sense pieces of light having differentwavelength bands, wherein each of the plurality of color pixelscomprises a same number of phase detection pixels.
 2. The pixel array ofclaim 1, wherein each of the phase detection pixels is disposed at apredetermined position of each of the plurality of color pixels.
 3. Thepixel array of claim 1, wherein the plurality of color pixels comprisesa first color pixel and a second color pixel, and a first phasedetection pixel included in the first color pixel is directly adjacentto a second phase detection pixel included in the second color pixel. 4.The pixel array of claim 3, wherein the first phase detection pixel andthe second phase detection pixel share one micro-lens.
 5. The pixelarray of claim 1, wherein the plurality of pixel groups comprises afirst pixel group comprising a first color pixel and a second pixelgroup comprising a second color pixel, and a first phase detection pixelincluded in the first color pixel is directly adjacent to a second phasedetection pixel included in the second color pixel.
 6. The pixel arrayof claim 1, wherein the plurality of color pixels comprises a firstcolor pixel and a second color pixel, and a first phase detection pixelincluded in the first color pixel is disposed at a same position in thefirst color pixel as a second phase detection pixel included in thesecond color pixel.
 7. The pixel array of claim 1, wherein the pluralityof color pixels comprises a first color pixel comprising a first phasedetection pixel and a second color pixel comprising a second phasedetection pixel, and a position of the first phase detection pixel issymmetrical with a position of the second phase detection pixel.
 8. Thepixel array of claim 1, wherein an amount of crosstalk occurring in eachphase detection pixel from a directly adjacent subpixel is the same foreach color pixel.
 9. The pixel array of claim 1, wherein the pluralityof color pixels comprises a first green pixel, a red pixel, a bluepixel, and a second green pixel.
 10. The pixel array of claim 9, whereinthe first green pixel comprises a first phase detection pixel, the redpixel comprises a second phase detection pixel, the blue pixel comprisesa third phase detection pixel, the second green pixel comprises a fourthphase detection pixel, and the first to fourth phase detection pixelsare directly adjacent to one another.
 11. The pixel array of claim 10,wherein the first to fourth phase detection pixels share one micro-lens.12. The pixel array of claim 1, wherein each of the phase detectionpixels comprises a metal shield.
 13. An image sensor, comprising: apixel array comprising a plurality of subpixels and a plurality of colorpixels configured to sense pieces of light having different wavelengthbands, wherein each of the plurality of color pixels comprises a samenumber of phase detection pixels; a readout circuit configured toconvert a sensing signal, received from the pixel array through aplurality of column lines, into binary data; a row decoder configured togenerate a row selection signal controlling the pixel array such thatthe sensing signal is output through a plurality of row lines for eachrow; and a control logic configured to control the row decoder and thereadout circuit.
 14. The image sensor of claim 13, wherein the pluralityof color pixels comprises a first color pixel comprising a first phasedetection pixel and a second color pixel comprising a second phasedetection pixel, and the first phase detection pixel is directlyadjacent to the second phase detection pixel.
 15. (canceled)
 16. Theimage sensor of claim 13, wherein the plurality of color pixelscomprises a first color pixel comprising a first phase detection pixeland a second color pixel comprising a second phase detection pixel, andthe first phase detection pixel is disposed at a same position in thefirst color pixel as the second phase detection pixel is disposed in thesecond color pixel.
 17. (canceled)
 18. (canceled)
 19. The image sensorof claim 13, wherein each of the plurality of color pixels comprises onephase detection pixel.
 20. An image sensor, comprising: a pixel arraycomprising a plurality of subpixels and a plurality of color pixelsconfigured to sense pieces of light having different wavelength bands,wherein each of the plurality of color pixels comprises a phasedetection pixel disposed at a certain position; a readout circuitconfigured to convert a sensing signal, received from the pixel arraythrough a plurality of column lines, into binary data; a row decoderconfigured to generate a row selection signal controlling the pixelarray such that the sensing signal is output through a plurality of rowlines for each row; and a control logic configured to control the rowdecoder and the readout circuit and to change a method of outputting thesensing signal based on a mode signal.
 21. The image sensor of claim 20,wherein the mode signal indicates a first mode or a second mode, and thepixel array is configured to output the sensing signal from each of theplurality of subpixels based on the first mode and to summate and outputsensing results of the plurality of subpixels based on the second mode.22. The image sensor of claim 20, wherein the plurality of color pixelscomprises a first color pixel comprising a first phase detection pixeland a second color pixel comprising a second phase detection pixel, andthe first phase detection pixel is directly adjacent to the second phasedetection pixel.
 23. The image sensor of claim 20, wherein the pluralityof color pixels comprises a first color pixel comprising a first phasedetection pixel and a second color pixel comprising a second phasedetection pixel, and the first phase detection pixel is disposed at asame position in the first color pixel as the second phase detectionpixel is disposed in the second color pixel. 24-25. (canceled)